Landau-level degeneracy and quantum Hall effect in a graphite bilayer.
By E. McCann, Vladimir Fal'ko. Physical Review Letters, 2005
1,451 citations recorded by the source corpus.
We derive an effective two-dimensional Hamiltonian to describe the low-energy electronic excitations of a graphite bilayer, which correspond to chiral quasiparticles with a parabolic dispersion exhibiting Berry phase 2pi. Its high-magnetic-field Landau-level spectrum consists of almost equidistant groups of fourfold degenerate states at finite energy and eight zero-energy states. This can be translated into the Hall conductivity dependence on carrier density, sigma(xy)(N), which exhibits plateaus at integer values of 4e2/h and has a double 8e2/h step between the hole and electron gases across zero density, in contrast to (4n + 2)e2/h sequencing in a monolayer.
Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/33182e39286bb6fb5defc097ef3b715baa55b159
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In Atomic and Molecular Physics, and Optics
- K. Novoselov
- A.K. Geim
- Francisco Guinea
- N. M. R. Peres
- A. C. Castro Neto
- Takashi Taniguchi
- Kenji Watanabe
- M. Katsnelson
In Materials Chemistry
- K. Novoselov
- N. M. R. Peres
- A.K. Geim
- Francisco Guinea
- A. C. Castro Neto
- Takashi Taniguchi
- Kenji Watanabe
- M. Katsnelson
Citations in the corpus
- Electrically tunable transverse magnetic focusing in graphene (2013, background): “An additional possible source of mismatch in BLG, which does not exist in MLG, is trigonal warping [17] of the Fermi surface due to the next nearest neighbor inter-layer hopping term γ3.”
- Chiral tunnelling and the Klein paradox in graphene (2006, background): “On the other hand, these quasiparticles are also chiral and described by spinor wavefunction”
- Ultralow-Voltage Bilayer Graphene Tunnel FET (2009, background): “V ERY recent theoretical and experimental papers [1]–[4] have shown the possibility of inducing an energy gap (Egap) in bilayer graphene by means of an applied electric field perpendicular to the graphene plane.”
- The role of contact resistance in graphene field-effect devices (2017, background): “A gap opening can be also obtained by breaking the symmetry along the vertical (c-) axis stacking two layers, the AB-stacking, to form a bilayer graphene (BLG) [65].”