Ductile Regime Nanomachining of Single-Crystal Silicon Carbide

By J. Patten, Wei Gao, K. Yasuto. 2005

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Brittle-ductile transition during diamond turning of single crystal silicon carbide (2013, background): “Therefore, SPDT of silicon carbide (SiC) is of significant technological interest and economic advantage for various industrial applications [9,10].”
Mechanism for material removal in diamond turning of reaction-bonded silicon carbide (2009, background): “Therefore, it can be presumed that the cutting mechanism of RB-SiC, which is a two-phase compound material having a major phase of high hardness (SiC) and a minor phase of low hardness (Si), will be distinctly different from those of singlecrystal SiC wafer [14] and CVD-SiC [15].”
Diamond machining of silicon: A review of advances in molecular dynamics simulation (2015, unknown): “Thus, SiC can either be formed in the cutting chips or as a thin film on the surface of the diamond tool.”
Molecular dynamics simulation study of deformation mechanisms in 3C-SiC during nanometric cutting at elevated temperatures (2016, unknown): “Of interest is that Mishra and Szlufarska [40] reported that dislocation activity can lead to amorphization near the surface of 3C-SiC during nanoindentation, and connected their observations to the amorphous chips observed in nanomachining experiments on 6H-SiC [41].”