Brittle-ductile transition during diamond turning of single crystal silicon carbide

By Saurav Goel, Xichun Luo, P. Comley, Robert L. Reuben, Andrew Cox. 2013

219 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Materials Chemistry, Mechanical Engineering

View Paper: https://www.semanticscholar.org/paper/df4ecf21757603c3df05e525b3fa697ca45b7bcf

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Saurav Goel
2. Alexander Stukowski
3. Xichun Luo

In Materials Chemistry

1. Saurav Goel
2. A. Kovalchenko
3. G. Cross
4. Alexander Stukowski
5. Xichun Luo
6. M. Yaghoobi
7. George Z. Voyiadjis
8. J. Weissmuller

In Mechanical Engineering

1. G. Cross
2. Alexander Stukowski
3. Saurav Goel

Citations in the corpus

• Damage evolution mechanism and low-damage grinding technology of silicon carbide ceramics (2024, unknown): “…material removal mechanisms pertinent to SiC ceramics differ significantly from those applicable to monocrystalline counterparts due largely to their unique microstructural characteristics, such as complex grain shapes [46, 47], grain boundaries (GBs) [48], pore defects, and secondary phases [49].”
• Influence of microstructure on the cutting behaviour of silicon (2016, background): “Examples are an elastic-plastic transition of the material, movement and propagation of dislocations and varying reactions of grain boundaries in the cutting zone [20], all of which are influenced by the crystallographic structure, orientation and microstructure of the material.”