Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K

By J. Margetis, S. Al-Kabi, W. Du, Wei Dou, Yiyin Zhou, T. Pham, P. Grant, S. Ghetmiri, A. Mosleh, Baohua Li and 6 more. 2017

165 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/3133391da1647cebbf2f7c4034e4dfb85e83fd18

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Richard A. Soref

Citations in the corpus

• Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications (2019, methodology): “The details of the growth technique were published elsewhere.(9,10) After growth, material characterizations including cross-sectional TEM and secondary ion mass spectrometry (SIMS) were performed to identify the layer thicknesses and Sn composition.”