Carbon nanotube memory devices of high charge storage stability

By J. Cui, R. Sordan, M. Burghard, K. Kern. 2002

159 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/30b80d5a87651ea30fe67f189ce87dd077aa6f05

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Tseung-Yuen Tseng

In Materials Chemistry

1. S. Sze
2. Tseung-Yuen Tseng
3. J. S. Meena
4. Umesh Chand

Citations in the corpus

• Overview of emerging nonvolatile memory technologies (2014, background): “reported CNT memory devices exhibiting an extraordinarily high charge storage stability of more than 12 days at room temperature [154].”