Current crowding in GaN/InGaN light emitting diodes on insulating substrates

By X. Guo, E. Fred Schubert. 2001

239 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/301c1365acefd5e2543a5a6a3ae980b6f5192091

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In Condensed Matter Physics

1. T. Katona
2. Asif Khan
3. K. Balakrishnan

Citations in the corpus

• Ultraviolet light-emitting diodes based on group three nitrides (2008, background): “Lateral current crowding The problem of lateral current crowding with electrically insulating substrates, and more particularly sapphire-based deep-UV LEDs has been analysed, and an interdigitated multi-finger geometry was demonstrate”
• Theoretical possibilities of InxGa1-xN tandem PV structures (2005, background): “• The electronic properties and the effective masses of the identified InxGa1-xN alloys, are assumed to be equal to GaN's, which were taken from references [5,6].”