Spin and valley quantum Hall ferromagnetism in graphene
By A. Young, Cory R. Dean, Lei Wang, H. Ren, P. Cadden-Zimansky, Kenji Watanabe, Takashi Taniguchi, James C. Hone, Kenneth L. Shepard, Philip Kim. Nature Physics, 2012
346 citations recorded by the source corpus.
Electronic systems with multiple degenerate degrees of freedom can support a rich variety of broken symmetry states. In a graphene Landau level (LL), strong Coulomb interactions and the fourfold spin–valley degeneracy lead to an approximate SU(4) isospin symmetry. At partial filling, exchange interactions can break this symmetry, manifesting as further Hall plateaus outside the normal integer sequence. Here we report the observation of a number of these quantum Hall isospin ferromagnetic (QHIFM) states, which we classify according to their real spin structure using tilted field magnetotransport. The large activation gaps confirm the Coulomb origin of all the broken symmetry states, but the order depends strongly on LL index. In the high-energy LLs the Zeeman effect is the dominant aligning field, leading to real spin ferromagnets hosting skyrmionic excitations at half filling, whereas in the ‘relativistic’ zero LL lattice scale interactions drive the system to a spin unpolarized state. The extra states sometimes observed in graphene’s quantum Hall characteristics have been presumed to be the result of broken SU(4) symmetry. Magnetotransport measurements of high-quality graphene in a tilted magnetic field finally prove this is indeed the case.
Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/2ea0df5bb5d38cf6a4ae5cf015b6dc904c6a1a24
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In Atomic and Molecular Physics, and Optics
- Takashi Taniguchi
- Kenji Watanabe
- A. Morpurgo
- Francisco Guinea
- K. Novoselov
- A.K. Geim
- N. M. R. Peres
- Allan H. MacDonald
In Materials Chemistry
- Takashi Taniguchi
- Kenji Watanabe
- A. Morpurgo
- L. Levitov
- Francisco Guinea
- Christoph Stampfer
- K. Novoselov
- P. Jarillo-Herrero
Citations in the corpus
- Origin and magnitude of 'designer' spin-orbit interaction in graphene on semiconducting transition metal dichalcogenides (2016, background): “[39], which is indicative of the high quality of the devices”
- Random Strain Fluctuations as Dominant Disorder Source for High-Quality On-Substrate Graphene Devices (2014, background): “high carrier mobility values, and leading to the observation of new, interesting physical phenomena [5–9].”