An X-ray photoelectron spectroscopy study of the oxides of GaAs
By C. Surdu-Bob, S. Saied, J. Sullivan. 2001
166 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Surfaces, Coatings and Films
View Paper: https://www.semanticscholar.org/paper/2c74799df5f01277e5663f50cd87f088913436c4
How researchers see this paper
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- G. Dalapati
- W. Loh
- Y. Tong
- Hoe Keat Mun
- B. Cho
Citations in the corpus
- Electrical and Interfacial Characterization of Atomic Layer Deposited High- $\kappa$ Gate Dielectrics on GaAs for Advanced CMOS Devices (2007, background): “a high defect density at the interface, which detrimentally affects the electrical characteristics of the devices [7].”