Migration of oxygen vacancy in HfO2 and across the HfO2∕SiO2 interface: A first-principles investigation

By N. Capron, Peter Broqvist, Alfredo Pasquarello. 2007

159 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/2c6ddd4d31c1300698dd4df6cf58fb2952856740

Citations in the corpus

• Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching (2015, unknown): “the much higher diffusion barrier [41]).”