Quantitative analysis of ferroelectric domain imaging with piezoresponse force microscopy

By T. Jungk, Á. Hoffmann, E. Soergel. 2005

134 citations recorded by the source corpus.

The contrast mechanism for ferroelectric domain imaging via piezoresponse force microscopy (PFM) is investigated. A vectorial description of PFM measurements is presented which takes into account the background caused by the experimental setup. This allows a quantitative, frequency independent analysis of the domain contrast which is in good agreement with the expected values for the piezoelectric deformation of the sample and satisfies the generally required features of PFM imaging.

Subfields: Atomic and Molecular Physics, and Optics, Control and Systems Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/2b13d7fa112c7a5044891c9d1988b8634fa55fb6

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. G. Catalán
2. Ramamoorthy Ramesh
3. J. Scott
4. E. Soergel

In Materials Chemistry

1. J. Scott
2. Ramamoorthy Ramesh
3. G. Catalán
4. J. Seidel
5. E. Soergel
6. K. Rabe

Citations in the corpus

• Piezoresponse force microscopy (PFM) (2011, background): “The observed frequency dependence of the PFM contrast is explained by taking a ‘system-inherent background’ into account [81, 82].”
• Domain wall nanoelectronics (2012, methodology): “…of the switching process (with developments such as stroboscopic PFM and PFM spectroscopy) and (ii) the structure of domain walls (Gruverman et al., 2005; Jungk, Hoffmann, and Soergel, 2006; Rodriguez et al., 2007a, 2007b; Morozovska et al., 2008; Kalinin et al., 2010) (see also Fig.”