Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells

By J. Northrup, C. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. Johnson, T. Kolbe. 2012

160 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/2a2c4900cd59b2833089387dc0186ec22eae7c64

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In Condensed Matter Physics

1. J. Rass
2. M. Kneissl

In Mechanics of Materials

1. J. Rass
2. M. Kneissl

Citations in the corpus

• III-Nitride Ultraviolet Emitters: Technology and Applications (2015, methodology): “3 In-situ data of curvature k and process temperature T recorded by EpiCurveTT (LayTec AG) of MOVPE growth of non-intentionally and Si-doped AlN on sapphire [20] 3 Vapor Phase Epitaxy of AlGaN Base Layers .”