Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier

By Young Min Lee, J. Hayakawa, S. Ikeda, Fumihiro Matsukura, Hideo Ohno. 2007

310 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Mechanical Engineering

View Paper: https://www.semanticscholar.org/paper/2977985ba071b1e28fbc340e6092f9d2826befd2

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Albert Fert
2. Can-Ming Hu
3. Claude Chappert
4. M. Harder
5. F.N. Van Dau
6. Y. Gui
7. T. Jungwirth

In Electronic, Optical and Magnetic Materials

1. M. Harder
2. Can-Ming Hu
3. Albert Fert
4. Y. Gui

Citations in the corpus

• The emergence of spin electronics in data storage. (2007, background): “3nm) annealed at 475°C after growth, measured at room temperature (black circles) and at 5 K (open circles), taken from reference [31].”
• Electrical Detection of Magnetization Dynamics via Spin Rectification Effects (2016, background): “MTJs quickly led to the giant TMR results of up to 200% in 2004 [117, 122] and modern devices are capable of achieving MR ratios of over 500% at RT [72, 123].”
• Nobel Lecture: Origin, development, and future of spintronics (2008, unknown): “TMR ratios of about 600% have been now reached Lee et al., 2007 Fig.”