Electron spin relaxation times of phosphorus donors in silicon

By A. Tyryshkin, S. Lyon, A. Astashkin, A. Raitsimring. 2003

333 citations recorded by the source corpus.

Donor electron spins in phosphorus-doped silicon (Si:P) are a candidate two-level system (qubit) for quantum information processing. Spin echo measurements of isotopically purified ${}^{28}\mathrm{S}\mathrm{i}:\mathrm{P}$ are presented that show exceptionally long transverse relaxation (decoherence) times, ${T}_{2},$ at low temperature. Below $\ensuremath{\sim}10\mathrm{K}$ the spin decoherence is shown to be controlled by instantaneous diffusion and at higher temperatures by an Orbach process. ${T}_{2}$ for small pulse turning angles is 14 ms at 7 K and extrapolates to $\ensuremath{\sim}60\mathrm{ms}$ for an isolated spin, over 2 orders of magnitude longer than previously demonstrated.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/28c854af267fe0a083910297425d8e2270c9d9e0

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In Atomic and Molecular Physics, and Optics

  1. Franco Nori
  2. Sahel Ashhab
  3. Peter Zoller
  4. Mikhail D. Lukin
  5. Kohei M. Itoh
  6. H. Watanabe
  7. Peter Rabl
  8. Ivar Martin

In Electrical and Electronic Engineering

  1. Kohei M. Itoh
  2. H. Watanabe
  3. Franco Nori
  4. Sahel Ashhab
  5. Peter Zoller
  6. A. Morello
  7. Mikhail D. Lukin
  8. Gerhard Klimeck

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