Electron spin relaxation times of phosphorus donors in silicon
By A. Tyryshkin, S. Lyon, A. Astashkin, A. Raitsimring. 2003
333 citations recorded by the source corpus.
Donor electron spins in phosphorus-doped silicon (Si:P) are a candidate two-level system (qubit) for quantum information processing. Spin echo measurements of isotopically purified ${}^{28}\mathrm{S}\mathrm{i}:\mathrm{P}$ are presented that show exceptionally long transverse relaxation (decoherence) times, ${T}_{2},$ at low temperature. Below $\ensuremath{\sim}10\mathrm{K}$ the spin decoherence is shown to be controlled by instantaneous diffusion and at higher temperatures by an Orbach process. ${T}_{2}$ for small pulse turning angles is 14 ms at 7 K and extrapolates to $\ensuremath{\sim}60\mathrm{ms}$ for an isolated spin, over 2 orders of magnitude longer than previously demonstrated.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/28c854af267fe0a083910297425d8e2270c9d9e0
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In Atomic and Molecular Physics, and Optics
- Franco Nori
- Sahel Ashhab
- Peter Zoller
- Mikhail D. Lukin
- Kohei M. Itoh
- H. Watanabe
- Peter Rabl
- Ivar Martin
In Electrical and Electronic Engineering
- Kohei M. Itoh
- H. Watanabe
- Franco Nori
- Sahel Ashhab
- Peter Zoller
- A. Morello
- Mikhail D. Lukin
- Gerhard Klimeck
Citations in the corpus
- Natural and artificial atoms for quantum computation (2010, background): “Coherent control and measurement of single spins in solids [105, 106, 107, 108, 109, 110, 111, 112, 113, 114, 115, 116, 117, 118, 119, 120, 121, 122, 123, 9, 124, 125, 126, 58, 127, 128, 129, 130, 131, 132] is now possible, and this allows using electron spins in semiconductor quantum dots [115], or”
- Isotope engineering of silicon and diamond for quantum computing and sensing applications (2014, methodology): “Isonics (28)Si epilayers was reported by the Princeton University group.([61]) The coherence was improved even further in 2011 by the international collaboration headed by the same group using”
- Silicon quantum electronics (2012, background): “(Tyryshkin et al., 2003) requires a more sophisticated treatment of the spin bath dynamics, where non-Markovian time correlations are taken into account.”
- Topological frequency conversion in strongly driven quantum systems (2016, background): “[50]), or NMR or electron spin resonance systems [51], one can dramatically increase the pumping power to macroscopic levels.”
- A quantum spin transducer based on nanoelectromechanical resonator arrays (2009, background): “Note that intrinsic spin coherence times T2 in the range of 1-10 ms have been observed with NV centers [8, 33] or p h sphor donors [12].”
- Spintronics: Fundamentals and applications (2004, unknown): “This claim is supported by the recent measurement of the spin dephasing time of about 60 ms of an isolated spin in a phosphorus donor in isotopically pure 28Si, by spin echo measurements (Tyryshkin et al., 2003).”