Fabrication and photoresponse of a pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO and n-ZnO

By H. Ohta, M. Hirano, K. Nakahara, H. Maruta, T. Tanabe, M. Kamiya, T. Kamiya, Hideo Hosono. 2003

329 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/28aafb9a1371f7ae8df4903087813a9ef1a58d88

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In Electronic, Optical and Magnetic Materials

1. Kewei Liu
2. Masakazu Aono
3. Makoto Sakurai

In Materials Chemistry

1. Kewei Liu
2. Masakazu Aono
3. Makoto Sakurai

Citations in the corpus

• ZnO-Based Ultraviolet Photodetectors (2010, methodology): “Ohta et al. found that efficient UV-response for n-ZnO/p-NiO photodiode was observed up to ~0.3 A/W at 360 nm (−6 V biased) [53,54].”