Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs
By Zhiqiang Wang, Xiaojie Shi, Leon M. Tolbert, Fred Wang, Zhenxian Liang, Daniel Costinett, B. Blalock. IEEE transactions on power electronics, 2016
247 citations recorded by the source corpus.
Subfields: Ceramics and Composites, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/2834ce1888c29af4763a0d73fb6b852f6a5c5817
How researchers see this paper
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In Electrical and Electronic Engineering
- Frede Blaabjerg
- Huai Wang
- Alejandro G. Yepes
- J. Doval‐Gandoy
- Xiongfei Wang
- Marco Liserre
- Ke Ma
- Friedrich Wilhelm Fuchs
Citations in the corpus
- Power Electronics Reliability: State of the Art and Outlook (2021, background): “The impact of thermal stress on short-circuit capability is studied in [31, 32] based on the testing of 1.”
- A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs (2016, unknown): “64 Wide experimental data on different commercial devices and 65 numerical investigations through electrically and thermally 66 coupled models were exploited to analyze the temperature 67 dependence of SC withstanding capability in [21].”
- Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges (2019, methodology): “The temperature dependence of the short-circuit capability of SiC MOSFETs is investigated in [149] by testing up to 200 °C.”