Tunable band gaps in bilayer transition-metal dichalcogenides

By Ashwin Ramasubramaniam, D. Naveh, E. Towe. 2011

524 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/265fd31096877ba01649c3fc52b0fe1ec7350feb

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In Electrical and Electronic Engineering

1. Gang Zhang
2. Yong‐Wei Zhang
3. Yongqing Cai
4. Z. Ong
5. V. Sorkin
6. V. Shenoy

In Materials Chemistry

1. Yong‐Wei Zhang
2. Gang Zhang
3. Yongqing Cai
4. Z. Ong
5. V. Sorkin
6. V. Shenoy

Citations in the corpus

• Tuning the electronic properties of semiconducting transition metal dichalcogenides by applying mechanical strains. (2012, background): “Similar to graphene, the band gap of a single layer of semiconducting TMDs remains uneffected by the external electric field and can only be modulated when there are two or more layers.(20) Thus, all of the above-discussed schemes allow for tuning of the band gap but possess limitations in their own”
• Recent Advances in the Study of Phosphorene and its Nanostructures (2017, background): “Adapted with permission Ramasubramaniam et al.101 Permission to reuse must be obtained from the rightsholder.)”