A Group-IV Ferromagnetic Semiconductor: MnxGe1−x

By Y. Park, Aubrey T. Hanbicki, S. Erwin, C. Hellberg, J. Sullivan, J. Mattson, T. Ambrose, A. Wilson, G. Spanos, B. T. Jonker. Science, 2002

1,398 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/24cb4e9ac2463fa090d9cb2b89f6554530315ca0

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In Electronic, Optical and Magnetic Materials

1. Hideo Ohno
2. T. Dietl
3. A. Bhattacharya
4. A. Millis
5. J. Triscone

In Materials Chemistry

1. Hideo Ohno
2. T. Dietl
3. A. Morpurgo
4. J. Mannhart
5. M. Di Ventra
6. A. Bhattacharya
7. A. Millis
8. J. Triscone

Citations in the corpus

• Electrostatic modification of novel materials (2006, background): “…more than two charge states of a SMT is generally extremely challenging, even in devices incorporating ultrathin aluminum-oxide gate dielectrics Park et al., 2000, 2002; Liang et al., 2002 , though multiple accessible redox states have been reported in a related technique Kubatkin et al., 2003…”