Optical Properties of Solids
By M. Fox. 2002
3,789 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/23fff8d38a2c6566c35950412894bfc6fe5e82e3
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In Electrical and Electronic Engineering
Citations in the corpus
- Reflection infrared spectroscopy for the non-invasive in situ study of artists’ pigments (2012, background): “scattering coefficient is dependent on λ−4, when the scattering centre is much smaller than the infrared wavelength [19]), the low wavenumber bands having a lower scattering coefficient are intensified with respect to the high wavenumber side region [20].”
- Ab initio study of the bandgap engineering of Al1−xGaxN for optoelectronic applications (2010, neutral): “While Kramers-Kronig relation is used to calculate the real part of the dielectric function 1 from 2 [25]:”
- Assessing Tauc Plot Slope Quantification: ZnO Thin Films as a Model System (2018, background): “Beginning from the assumption that the conduction band is essentially empty and the valence band is essentially filled, we can derive the optical absorption coefficient for direct transitions in semiconductors [39, 40].”
- Electronic excitations: density-functional versus many-body Green's-function approaches (2002, neutral): “Its relation to the microscopic dielectric function « of periodic crystals has been discussed by Adler (1962) and Wiser (1963) as well as by Ehrenreich (1966): «M~v”
- VASPKIT: A user-friendly interface facilitating high-throughput computing and analysis using VASP code (2019, positive): “, refractive index n(ω), extinction coefficient κ(ω), absorption coefficient α(ω), energy-loss function L(ω), and reflectivity R(ω) can be calculated from the real ε1(ω) and the imaginary ε2(ω) parts [76]:”
- Optical Properties and Plasmonic Performance of Titanium Nitride (2015, methodology): “The dielectric function of TiN films can be analyzed, via appropriate modeling in order to take into account contributions of intraband and interband transitions as described by a Drude term and several Lorentz oscillators, respectively [120,139]:”
- SnS thin-films by RF sputtering at room temperature (2011, background): “photon energy diagram, indicating that the indirect bandgap relation is applicable (Table 1) [16].”