SnS thin-films by RF sputtering at room temperature
By Katy Hartman, J. Johnson, M. Bertoni, D. Recht, M. Aziz, M. Scarpulla, Tonio Buonassisi. 2011
252 citations recorded by the source corpus.
article i nfo Tin monosulfide (SnS) is of interest as a potential solar cell absorber material. We present a preliminary investigation of the effects of sputtering conditions on SnS thin-film structural, optical, and electronic properties. Films were RF sputtered from an SnS target using an argon plasma. Resistivity, stoichiometry, phase, grain size and shape, bandgap, and optical absorption coefficient can be varied by modifying argon pressure for a fixed deposition time. Most films have an indirect bandgap in the range of 1.08-1.18 eV. XRD patterns confirmed the films as mostly crystalline, and grain morphology was examined using profile and surface SEM images.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/0b133889c2312c681b4fe30b7df2855fec8f0348
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Citations in the corpus
- Co‐optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells (2015, background): “5 eV [1,2], and high absorption coefficient above 10(4) cm 1 [3,4].”
- Development of sulphurized SnS thin film solar cells (2015, methodology): “Tin sulphide have been prepared using a variety of deposition techniques, such as spray pyrolysis [6, 10, 15, 43], thermal evaporation [13, 16, 51, 39], electronbeam evaporation[17], hot wall deposition [18], chemical bath deposition [19, 55], successive ionic layer adsorption and reaction [20], RF ”