Raman imaging of doping domains in graphene on SiO2
By Christoph Stampfer, F. Molitor, D. Graf, Klaus Ensslin, A. Jungen, Christofer Hierold, L. Wirtz. 2007
204 citations recorded by the source corpus.
We present spatially resolved Raman images of the G and 2D lines of single-layer graphene flakes. The spatial fluctuations of G and 2D lines are correlated and are thus shown to be affiliated with local doping domains. We investigate the position of the 2D line—the most significant Raman peak to identify single-layer graphene—as a function of charging up to ∣n∣≈4×1012cm−2. Contrary to the G line which exhibits a strong and symmetric stiffening with respect to electron and hole doping, the 2D line shows a weak and slightly asymmetric stiffening for low doping. Additionally, the linewidth of the 2D line is, in contrast to the G line, doping independent making this quantity a reliable measure for identifying single-layer graphene.
Subfields: Biomedical Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/2166d4384ebe306578d32a40354b7220569e9d22
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Citations in the corpus
- Exceptional dielectric properties of chlorine-doped graphene oxide/poly (vinylidene fluoride) nanocomposites (2015, background): “[38] Stampfer C, Molitor F, Graf D, Ensslin K, Jungen A, Hierold C, et al.”
- Raman characterization of defects and dopants in graphene (2015, background): “For example, graphene flakes deposited on SiO2 are typically doped by ∼1011 cm−2 [75, 100].”
- Raman Spectroscopic Characterization of Graphene (2010, background): “As a nondestructive technique, a considerable amount of work on graphene has been performed by Raman spectroscopy (46, 47).”
- Random Strain Fluctuations as Dominant Disorder Source for High-Quality On-Substrate Graphene Devices (2014, background): “[40] C.”
- Raman spectroscopy and imaging of graphene (2008, methodology): “This makes Raman spectroscopy an effective technique to determine the doping type and dopant concentration in graphene [26, 27].”