Harsh Environment Silicon Carbide Sensors for Health and Performance Monitoring of Aerospace Systems: A Review

By Debbie G. Senesky, B. Jamshidi, Kan Bun Cheng, A. Pisano. IEEE Sensors Journal, 2009

202 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/213651fd7c0b5c91d2bf129af65d2ac7da77c0a2

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Humber Furlan
2. R. Pessoa
3. Dzung Viet Dao
4. Mariana Amorim Fraga
5. Nam-Trung Nguyen
6. Marcos Massi

In Electrical and Electronic Engineering

1. Humber Furlan
2. R. Pessoa
3. Hoang‐Phuong Phan
4. Sima Dimitrijev
5. Dzung Viet Dao
6. Mariana Amorim Fraga
7. K. Nakamura
8. Nam-Trung Nguyen

Citations in the corpus

• The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review (2015, methodology): “Silicon carbide [68], gallium nitride (GaN) [27], [28], on the other hand, are good candidates for devices operated at high temperatures and harsh environments such as turbine engines, deep well-drilling, and spacecrafts [12].”
• Wide bandgap semiconductor thin films for piezoelectric and piezoresistive MEMS sensors applied at high temperatures: an overview (2014, background): “More specifically, SiC remains stable in high temperature, oxidizing ambient, whereas diamond graphitizes (Senesky et al. 2009).”