Read Stability and Write-Ability Analysis of SRAM Cells for Nanometer Technologies

By E. Grossar, M. Stucchi, K. Maex, Wim Dehaene. IEEE Journal of Solid-State Circuits, 2006

481 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/2130c022ea3733ca1203ca1bd3d1328b8e3963f8

How researchers see this paper

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In Electrical and Electronic Engineering

1. Keejong Kim
2. Kaushik Roy
3. Jaydeep P. Kulkarni
4. Yonghong Tian

Citations in the corpus

• A 160 mV Robust Schmitt Trigger Based Subthreshold SRAM (2007, background): “Write-trip-point defines the maximum bitline voltage needed to flip the cell content [16].”