Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene

By Wenjuan Zhu, V. Perebeinos, M. Freitag, Phaedon Avouris. 2009

421 citations recorded by the source corpus.

The carrier density and temperature dependence of the Hall mobility in monolayer, bilayer, and trilayer graphene has been systematically studied. We found that as the carrier density increases, the mobility decreases for monolayer graphene, while it increases for bilayer/trilayer graphene. This can be explained by the different density of states in monolayer and bilayer/trilayer graphenes. In monolayer, the mobility also decreases with increasing temperature primarily due to substrate surface polar phonon scattering. In bilayer/trilayer graphene, on the other hand, the mobility increases with temperature because the electric field of the substrate surface polar phonons is effectively screened by the additional graphene layers and the mobility is dominated by Coulomb scattering. We also find that the temperature dependence of the Hall coefficient in monolayer, bilayer, and trilayer graphene can be explained by the formation of electron and hole puddles in graphene. This model also explains the temperature dependence of the minimum conductance of monolayer, bilayer, and trilayer graphene. The electrostatic potential variations across the different graphene samples are extracted.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/209da6ea34de3932951ccdcbf12e9f23395dc830

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

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Citations in the corpus

Water on graphene: review of recent progress (2018, background): “While it is expected that with increasing carrier concentration, the mobility should decrease due to increase in carrier scattering [93, 94], the opposite trend was reported, with mobility decreasing with a decrease (increase) in carrier concentration (R.”
The shear mode of multilayer graphene. (2011, background): “[8] Zhu, W.”
Electronic transport in two-dimensional graphene (2010, background): “Recently, the temperature dependence of resistivity of graphene has been investigated experimentally (Tan, Zhang, Stormer, and Kim, 2007; Bolotin, Sikes, Hone et al., 2008; Chen, Jang, Xiao et al., 2008; Zhu et al., 2009).”
Colloquium: The transport properties of graphene: An introduction (2010, background): “How to reconcile this set of measurements with models explaining the mobility of both monolayer and bilayer graphene based on the charge scattering mechanism (Zhu et al., 2009)?”
Structure and electronic transport in graphene wrinkles. (2012, methodology): “ of the main manuscript, yielding good agreement. Electronic transport across a graphene fold can be modeled in similar fashion, with σeff written as, 12 3 0 1111 1ff eff LLL σ LLσσ σ σ ⎛⎞− =+++⎜⎟ ⎝⎠ (7) where Lf is the length of the graphene fold, estimated from SEM to be ≈ 0.14µm, and L is the dev”
Quantum Hall effect and Landau-level crossing of Dirac fermions in trilayer graphene (2011, background): “However, the low mobility exhibited by TLG devices on conventional substrates has led to few experimental studie”
Electronic properties of graphene-based bilayer systems (2015, methodology): “[228] the carrier mobility was measured as a function of both temperature and carrier concentration.”
The hot pick-up technique for batch assembly of van der Waals heterostructures (2016, neutral): “This trend is largely reversed in monolayer samples, and is consistent with published observations 32 .”