Morphology of graphene thin film growth on SiC(0001)

By T. Ohta, F. El Gabaly, A. Bostwick, J. McChesney, K. Emtsev, A. Schmid, T. Seyller, K. Horn, Eli Rotenberg. 2007

160 citations recorded by the source corpus.

Epitaxial films of graphene on SiC(0001) are interesting from a basic physics as well as an applications-oriented point of view. Here, we study the emerging morphology of in vacuo prepared graphene films using low-energy electron microscopy (LEEM) and angle-resolved photoemission spectroscopy (ARPES). We obtain an identification of single-layer and bilayer graphene films by comparing the characteristic features in electron reflectivity spectra in LEEM to the π-band structure as revealed by ARPES. We demonstrate that LEEM serves as a tool to accurately determine the local extent of graphene layers as well as the layer thickness.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/1fe5ae08b8a91364ac8c87444e8460b782938f93

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

In Materials Chemistry

Citations in the corpus

Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. (2009, background): “However, the large-scale structural quality is limited at present by the lack of continuity and uniformity of the grown fil”
Epitaxial Graphene on SiC: A Review of Growth and Characterization (2016, methodology): “For example, the growth of epitaxial graphene on SiC(0001) in ultrahigh vacuum (UHV) yields graphene layers with low quality and small grains [39,88].”
High-yield production of graphene by liquid-phase exfoliation of graphite. (2008, background): “Alternatively, growth of graphene is also commonly achieved by annealing SiC substrates; however, these samples are in fact composed of a multitude of domains, most of them submicrometre in scale, and they are not spatially uniform in number or size over larger length scale”
Synthesis of Graphene and Its Applications: A Review (2010, unknown): “82 Continued success of this process has attracted attention of the semiconductor industries, as this process may be a viable technique in post-CMOS age 9 , 15 , 82 , 83 , 84 ( Figure 8b shows SEM image of graphene grown epitaxially on SiC surface).”
Growth of Epitaxial Graphene: Theory and Experiment (2014, methodology): “To investigate how the segregation of carbon atoms from the bulk affects graphene growth on Ru(0001), McCarty et al. [283] performed experiments under two different conditions required to grow graphene by segregation and deposition, respectively, and used LEEM measurements to measure the adatom conc”