Highly Uniform, Electroforming‐Free, and Self‐Rectifying Resistive Memory in the Pt/Ta2O5/HfO2‐x/TiN Structure

By J. Yoon, Seul Ji Song, Il-hyuk Yoo, Jun Yeong Seok, K. J. Yoon, D. Kwon, T. Park, C. S. Hwang. 2014

249 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/1fc611f1cac43dab14867ecf2a06169c54b222be