Generation of single color centers by focused nitrogen implantation

By J. Meijer, B. Burchard, M. Domhan, C. Wittmann, T. Gaebel, I. Popa, Fedor Jelezko, J. Wrachtrup. 2005

271 citations recorded by the source corpus.

Single defect centers in diamond have been generated via nitrogen implantation. The defects have been investigated by single defect center fluorescence microscopy. Optical and electron paramagnetic resonance spectra unambiguously show that the produced defect is the nitrogen-vacancy color center. An analysis of the nitrogen flux together with a determination of the number of nitrogen-vacancy centers yields that on average one 2MeV nitrogen atom need to be implanted per defect center.

Subfields: Computational Mechanics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/1fc445c2bdb467912490473c32770ae5743946c8

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Computational Mechanics

  1. J. Meijer
  2. S. Pezzagna
  3. Fedor Jelezko
  4. J. Wrachtrup
  5. Thomas Wolf
  6. Á. Gali

In Electrical and Electronic Engineering

  1. Fedor Jelezko
  2. Thomas Wolf
  3. Igor Aharonovich

In Materials Chemistry

  1. R. Walsworth
  2. Fedor Jelezko
  3. J. Wrachtrup
  4. L. Pham
  5. J. Meijer
  6. S. Pezzagna
  7. Marcus W. Doherty
  8. V. Jacques

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