Generation of single color centers by focused nitrogen implantation
By J. Meijer, B. Burchard, M. Domhan, C. Wittmann, T. Gaebel, I. Popa, Fedor Jelezko, J. Wrachtrup. 2005
271 citations recorded by the source corpus.
Single defect centers in diamond have been generated via nitrogen implantation. The defects have been investigated by single defect center fluorescence microscopy. Optical and electron paramagnetic resonance spectra unambiguously show that the produced defect is the nitrogen-vacancy color center. An analysis of the nitrogen flux together with a determination of the number of nitrogen-vacancy centers yields that on average one 2MeV nitrogen atom need to be implanted per defect center.
Subfields: Computational Mechanics, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/1fc445c2bdb467912490473c32770ae5743946c8
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Citations in the corpus
- Room-temperature coherent coupling of single spins in diamond (2006, background): “Fortunately, NV centres can be created in diamond by single-ion implantation of nitroge”
- Sensing electric fields using single diamond spins (2011, background): “Tailoring the material aspects of diamond,[13] efficient photon c llection [27] and multipulse control schemes [28] are options available for further improvement.”
- Quantum register based on coupled electron spins in a room-temperature solid. (2010, background): “and the possibility to create single defects by ion implantatio”
- Magnetic field imaging with nitrogen-vacancy ensembles (2011, background): “ to a thin layer on the diamond surface and placed within a sub-micron distance from the magnetic field source. This thin-layer geometry can be achieved either by shallow implantation of nitrogen ions [18, 19] or by altering the growth conditions of chemical vapor deposition (CVD) synthesized diamond”
- Creation and nature of optical centres in diamond for single-photon emission—overview and critical remarks (2011, background): “The least spot size of this system is about 300 nm [37], which is about the least size of the ionimplanted area when using high-energy ions.”
- Diamond-based single-photon emitters (2011, background): “In 2005 Meijer et al [108] demonstrated the implantation of nitrogen (103–105 N atoms per shot) accelerated to an energy of 2 MeV.”