Nanoscale molecular-switch devices fabricated by imprint lithography

By Yong Chen, D. Ohlberg, Xuema Li, Duncan R. Stewart, R. Stanley Williams, J. Jeppesen, Kent A. Nielsen, J. Stoddart, D. Olynick, E. Anderson. 2003

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Programmable polymer thin film and non-volatile memory device (2004, background): “Atomic movement or molecular isomerization that can result in electrical bistability is observed in molecular device”
Quantized conductance atomic switch (2005, methodology): “The ‘crossbar’ structure is convenient for integrating switches to be used in actual device”
Nanoscale molecular-switch crossbar circuits (2003, methodology): “From our previous study of single-cross-point devices fabricated with the same molecules and the same method [6, 20], we learned that the devices showed a sharp transition from a high-resistance to a low-resistance state when a positive voltage (sign convention defined in figure 3(a), top wire with ”
Nano/CMOS architectures using a field-programmable nanowire interconnect (2007, background): “Device ageing will also need to be addressed: we do not yet know, for example, for how long a configured junction will maintain its state [3].”