Nanoscale molecular-switch crossbar circuits

By Yong Chen, G. Jung, D. Ohlberg, Xuema Li, Duncan R. Stewart, J. Jeppesen, K. Nielsen, J. Stoddart, R. S. Williams. 2003

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Nano/CMOS architectures using a field-programmable nanowire interconnect (2007, background): “(2) The entire surface of the chip is coated with whatever switching layer or layers are necessary, followed by a thin blanket of a protective material such as Ti [ 2 ].”
Nanowire Transistor Performance Limits and Applications (2008, background): “In addition to field-effect devices, nanowire core/shell structures designed to function as reconfigurable diode switches that can be used in memory and wired-OR operations have been reported [117], [119].”
CMOL: Devices, Circuits, and Architectures (2006, background): “Recently, several specific proposals of such circuits were published and several groups made initial steps toward the experimental implementation of semiconductor-molecular hybrids [15]-[17].”
Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors (2009, background): “ystem [2]. Many systems belong to this class, including the thermistor [3] (whose internal state depends on the temperature), molecules whose resistance changes according to their atomic conﬁguration [4], or spintronic devices whose resistance v aries M. Di Ventra is with the Department of Physics, ”