Measurements of Permittivity, Dielectric Loss Tangent, and Resistivity of Float-Zone Silicon at Microwave Frequencies

By J. Krupka, J. Breeze, A. Centeno, N. Alford, Thomas Claussen, L. Jensen. IEEE transactions on microwave theory and techniques, 2006

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The complex permittivity and resistivity of float-zone high-resistivity silicon were measured at microwave frequencies for temperatures from 10 up to 400 K employing dielectric-resonator and composite dielectric-resonator techniques. At temperatures below 25 K, where all free carriers are frozen out, loss-tangent values of the order of 2times10-4 were measured, suggesting the existence of hopping conductivity or surface charge carrier conductivity in this temperature range. Use of a composite dielectric-resonator technique enabled the measurement of materials having higher dielectric losses (or lower resistivities) with respect to the dielectric-resonator technique. The real part of permittivity of silicon proved to be frequency independent. Dielectric losses of high-resistivity silicon at microwave frequencies are mainly associated with conductivity and their behavior versus temperature can be satisfactory described by dc conductivity models, except at very low temperatures

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/1dcb4a82faf971be0951b72d6dde7a2f97e299af

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