Extreme dielectric strength in boron doped homoepitaxial diamond

By P. Volpe, P. Muret, J. Pernot, F. Omnès, T. Teraji, Y. Koide, F. Jomard, D. Planson, P. Brosselard, N. Dheilly and 2 more. 2010

141 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/1dc10c27013d3959b6c07d7c5a8f3c3356b61987

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Giorgia Longobardi
2. Florin Udrea
3. Julien Pernot
4. Nicolas Rouger
5. Nicola Donato
6. Hitoshi Umezawa

In Materials Chemistry

1. Giorgia Longobardi
2. Florin Udrea
3. Julien Pernot
4. Nicolas Rouger
5. Nicola Donato
6. Hitoshi Umezawa

In Mechanics of Materials

1. Hitoshi Umezawa

Citations in the corpus

• Diamond power devices: state of the art, modelling, figures of merit and future perspective (2019, background): “Regarding p-type diamond Schottky diodes, high blocking voltages (up to 10 kV [86]) and critical electric field (7.”
• Recent advances in diamond power semiconductor devices (2018, background): “Power device capabilities such as a high blocking voltage of Vmax>10 kV [9,10], high current operation at> 20 A [11], and fast operation with low-loss switching [12] have been recently reported for diamond SBDs.”