Giant resistance switching in metal-insulator-manganite junctions : Evidence for Mott transition

By R. Fors, S. Khartsev, A. Grishin. 2005

160 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/1d55fb512d0de42dca2d20075b6fb5914cc7deda

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1. B. Gao
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Citations in the corpus

• Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory (2009, methodology): “oxide layer has already been adopted to interpret the resistive switching behavior of RRAM by prior research [4]–[9], but the proposed physical origin is surprisingly diverse, including thermal effect [8], ionic conduction [9], electronic effect [10], metal–insulator transition [11], and ferroelectr”