Thermal annealing in hydrogen for 3-D profile transformation on silicon-on-insulator and sidewall roughness reduction

By M.-C.M. Lee, Ming C. Wu. Journal of microelectromechanical systems, 2006

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Optical MEMS for Lightwave Communication (2006, methodology): “The quality factor of the microdisk is measured to be 10(5) thanks to the sidewall smoothing process by hydrogen annealing [175].”
Silicon Porosification: State of the Art (2010, background): “322 The sidewall roughness can be reduced by shortening the duration of the etching and passivation steps 300 or by post processing: thermal oxidation followed by oxide etching, 323 or annealing in a hydrogen atmosphere at high temperature 324 reduces the size of the scallops.”
Silicon Photonics (2006, background): “The emission is observed to diminish with current density, a phenomenon that may be due to FCA and Auger processes, and one that dampens the prospects of achieving electrically pumped amplification and lasing.”