Organic field-effect transistors with polarizable gate insulators

By Howard E. Katz, X. Hong, Ananth Dodabalapur, Rahul Sarpeshkar. 2002

200 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/178315173e50289a3344e7a89e8d482991d6e60d

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In Electrical and Electronic Engineering

1. M. Fuhrer

Citations in the corpus

• Properties and applications of high-mobility semiconducting nanotubes (2004, background): “A similar non-volatile memory based on charge storage in a thick SiO2 gate dielectric was reported in organic thin-film transistors; in this parallel-plate geometry Vg = 100 V (E ≈ 0.03 V nm−1) was sufficient to polarize the SiO2 dielectric (Katz et al 2002).”