Large voltage-induced magnetic anisotropy change in a few atomic layers of iron.

By T. Maruyama, Y. Shiota, T. Nozaki, K. Ohta, N. Toda, Masaki Mizuguchi, A. Tulapurkar, T. Shinjo, M. Shiraishi, S. Mizukami and 2 more. Nature Nanotechnology, 2009

1,199 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/170df409161fa40947a8bacebf9bf6b8ce35bcc7

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Pietro Gambardella
2. J. Sinova
3. T. Jungwirth
4. A. Manchon
5. Axel Hoffmann
6. I. Miron
7. Kevin Garello
8. A. Thiaville

In Electronic, Optical and Magnetic Materials

1. Pietro Gambardella
2. Juan G. Alzate
3. P. Amiri
4. Kang L. Wang
5. J. Sinova
6. A. Thiaville
7. Gong Chen
8. Axel Hoffmann

In Materials Chemistry

1. J. Sinova
2. Kang L. Wang
3. Axel Hoffmann
4. P. Amiri
5. An Chen
6. Pietro Gambardella
7. A. Manchon
8. T. Jungwirth

Citations in the corpus

• Non-volatile magnonic logic circuits engineering (2010, neutral): “There are other approaches to magneto-electric cell construction (e.g. voltage-controlled surface anisotropy [26]), which may be more efficient than the combination of piezoelectric-magnetostrictive materials.”
• A review of emerging non-volatile memory (NVM) technologies and applications (2016, background): “A discovery of large change of magnetic anisotropy in a Fe(001)/MgO(001) junction by a small electric field may help to reduce STTRAM switching power, which is known as voltage controlled magnetic anisotropy (VCMA) [22].”
• Electric-field-assisted switching in magnetic tunnel junctions. (2012, background): “Subsequently, electric-field-induced modification of magnetic anisotropy of a single Fe film in all-solid samples has been reporte”