Hysteresis-free reactive high power impulse magnetron sputtering
By E. Wallin, Ulf Helmersson. 2008
139 citations recorded by the source corpus.
Subfields: Aerospace Engineering, Electrical and Electronic Engineering, Mechanics of Materials
View Paper: https://www.semanticscholar.org/paper/16d4ef27bdb03260045d31bc259bf68fb850c97f
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In Aerospace Engineering
In Electrical and Electronic Engineering
In Mechanics of Materials
Citations in the corpus
- An introduction to thin film processing using high-power impulse magnetron sputtering (2012, background): “The length of the pulse is often kept in the range 10–500 ls(28,29) with a pulse frequency from tens of hertz to kilohertz.(5,30) The applied voltage during the pulse in most HiPIMS processes is usually around 500–1000 V, and the peak current density (peak discharge current/target area) reaches at m”