Modern Semiconductor Devices for Integrated Circuits

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Broadband 10 Gb/s operation of graphene electro‐absorption modulator on silicon (2016, methodology): “Cox is calculated using a simple parallel capacitor model and to calculate the capacitance Cs associated with the space charge layer we assume a MOS capacitor model in depletion mode at 0 V gate voltage [27].”
Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction (2015, background): “Exhaustive treatments of M/S contacts can be found in any semiconductor device textbook [33]-[37] or in extensive review articles as Ref.”