Single photon detector fabricated in a complementary metal-oxide-semiconductor high-voltage technology

By A. Rochas, M. Gani, B. Furrer, P. Besse, R. Popovic, G. Ribordy, Nicolas Gisin. 2003

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A Single Photon Avalanche Diode Implemented in 130-nm CMOS Technology (2007, background): “The result of a shallower multiplication region was a shift of the maximum of detection probability from 550 nm in [20] to 450 nm in this work.”
Progress in Silicon Single-Photon Avalanche Diodes (2007, background): “20–25 V can be obtained and exploited [19].”
100 000 Frames/s 64 × 32 Single-Photon Detector Array for 2-D Imaging and 3-D Ranging (2014, background): “major breakthrough was achieved in early 2000s, when SPAD structures were successfully demonstrated in standard highvoltage CMOS technologies [10]–[12].”
SPAD Figures of Merit for Photon-Counting, Photon-Timing, and Imaging Applications: A Review (2016, background): “In the last years, many groups worldwide developed different SPAD structures in different CMOS technology nodes [16]–[48] for coping with the different issues, including but”
Single-Photon Avalanche Diode CMOS Sensor for Time-Resolved Fluorescence Measurements (2009, background): “8- high voltage CMOS technologies [7]–[10].”