Spin-transfer torque magnetic random access memory (STT-MRAM)
By Dmytro Apalkov, Alexey Khvalkovskiy, Steven Watts, Vladimir Nikitin, Xueti Tang, Daniel Lottis, K. Moon, Xiao Luo, Eugene Chen, Adrian Ong and 2 more. JETC, 2013
488 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Computer Networks and Communications
View Paper: https://www.semanticscholar.org/paper/14dc05a51866b6832990fc7fe8c8f6b85730bb84
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In Atomic and Molecular Physics, and Optics
In Biomedical Engineering
In Computer Networks and Communications
Citations in the corpus
- Persistent B+-Trees in Non-Volatile Main Memory (2015, background): “…underlying physical mechanisms, e.g., the amorphous and crystalline states in phase change materials [4], the spin-transfer torque effect in a magnetic tunnel junction in STT-MRAM [2], or the impact of different directions of electrical currents on the resistance of Memristive devices [34].”
- In-Memory Big Data Management and Processing: A Survey (2015, unknown): “Advanced NVRAM technologies, such as phase change memory [199], Spin-Transfer Torque Magnetic RAM (STTMRAM) [200], and Memristors [201], can provide orders of magnitude better performance than either conventional”
- FPTree: A Hybrid SCM-DRAM Persistent and Concurrent B-Tree for Storage Class Memory (2016, methodology): “These technologies are grouped under the umbrella term of Storage Class Memory (SCM) and include Phase Change Memory [6], Memristors [29], and Spin-Transfer Torque Magnetic Random Access Memory [4].”
- Overview of emerging nonvolatile memory technologies (2014, background): “It must be dense (approximately 10 F(2)), fast (below 10 ns of read and write speeds), and operating at low power [96].”