Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy

By E. J. Miller, E. Yu, P. Waltereit, J. Speck. 2004

283 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/13bd99e1b895b13f741eba9c9b49b164e6787598