Energy gap tuning in graphene on hexagonal boron nitride bilayer system

By J. Sławińska, I. Zasada, Z. Klusek. 2010

203 citations recorded by the source corpus.

We use a tight-binding approach and density functional theory calculations to study the band structure of graphene/hexagonal boron nitride bilayer system in the most stable configuration. We show that an electric field applied in the direction perpendicular to the layers significantly modifies the electronic structure of the whole system, including shifts, anticrossing and other deformations of bands, which can allow to control a value of the energy gap. It is shown that band structure of biased system may be tailored for specific requirements of nanoelectronics applications. The carriers' mobilities are expected to be higher than in the bilayer graphene devices.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/1340a440ceb03287cc36755113056043b1fab358

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In Atomic and Molecular Physics, and Optics

In Materials Chemistry

Citations in the corpus

Electronic properties of graphene-based bilayer systems (2015, methodology): “and gap as large as 0:1eV. As an additional support, the emergence of the gap was also reported by workers employing density functional methods (e.g., Ref. [61] discussed free-standing samples, Refs. [62,63] investigated the samples on a substrate). The ability to engineer the gap attracted a lot of”
STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride (2011, result): “However, contrary to recent predictions[9, 10], this conformation does not lead to a sizable band gap due to the misalignment of the lattices.”
Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride. (2011, result): “However, contrary to recent predictions[9, 10], this conformation does not lead to a sizable band gap due to the misalignment of the lattices.”
Colloquium: Graphene spectroscopy (2014, background): “, 2007) For a hypothetical commensurate SLG/hBN structure, a band gap ∼ 50 meV was predicted (Giovannetti et al., 2007; Sławińska et al., 2010).”