Schottky barrier heights for Au and Pd contacts to MoS2

By Naveen Kaushik, Ankur Nipane, F. Basheer, Sudipta Dubey, S. Grover, M. Deshmukh, S. Lodha. 2014

261 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/11e2a232566ee010602af3dfba2b3d7f8345dbc1

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In Electrical and Electronic Engineering

1. Filippo Giubileo
2. Sanjay Kumar Banerjee
3. A. Di Bartolomeo

In Materials Chemistry

1. Filippo Giubileo
2. Sanjay Kumar Banerjee
3. Hema C. P. Movva
4. Amritesh Rai
5. D. Taneja
6. A. Di Bartolomeo
7. Anupam Roy
8. Sayema Chowdhury

Citations in the corpus

• The role of contact resistance in graphene field-effect devices (2017, methodology): “Several experiments already reported measurements of the contact resistance in FET structures realized with MoS2 channel, and Ti/Au, Ni/Au or Au contacts [255-257].”
• Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor (2018, background): “It is for this very pinning effect that most metal-contacted MoS2 FETs typically show unipolar n-type behavior as the metal Fermi level gets pinned near the CBE of MoS2 irrespective of the metal work function [135,136,155,156].”