Opportunities and challenges for Ge CMOS - Control of interfacing field on Ge is a key (Invited Paper)

By A. Toriumi, T. Tabata, C. Lee, T. Nishimura, K. Kita, K. Nagashio. 2009

135 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/1111a3bc0ef3aa5a251313937b8e99b606936cbe

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1. Po-Chin Huang
2. Ju-Chin Lin

Citations in the corpus

• High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using $\hbox{HfO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stacks Fabricated by Plasma Postoxidation (2013, background): “inversion carrier mobility in the channel [2], [3].”