Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes

By T. Kolbe, A. Knauer, C. Chua, Zhihong Yang, S. Einfeldt, P. Vogt, N. Johnson, M. Weyers, M. Kneissl. 2010

161 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/0da589f68326d4f15b87688b78674cf5104cdff0

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In Condensed Matter Physics

1. J. Rass
2. M. Kneissl

In Electronic, Optical and Magnetic Materials

1. M. Kneissl
2. J. Rass

In Mechanics of Materials

1. J. Rass
2. M. Kneissl

Citations in the corpus

• III-Nitride Ultraviolet Emitters: Technology and Applications (2015, methodology): “We observed a remarkable enhancement of the DUV emission of AlGaN-QWs by fabricating them on low TDD AlN templates [16, 17].”