Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayers

By K. C. Ku, S. Potashnik, Ruifang Wang, Seung-Hyun Chun, Peter Schiffer, Nitin Samarth, M. Seong, A. Mascarenhas, E. Johnston-Halperin, Roberto C. Myers and 2 more. 2002

265 citations recorded by the source corpus.

We report Curie temperatures up to 150 K in annealed Ga1−xMnxAs epilayers grown with a relatively low As:Ga beam equivalent pressure ratio. A variety of measurements (magnetization, Hall effect, magnetic circular dichroism and Raman scattering) suggest that the higher Curie temperature results from an enhanced free hole density. The data also indicate that, in addition to the carrier concentration, the sample thickness limits the maximum attainable Curie temperature in this material, suggesting that the free surface of Ga1−xMnxAs epilayers may be important in determining their physical properties.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/0d81048d938cee6b7ca9eb37868c8609ceda9972

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. J. Sinova
2. T. Jungwirth
3. Hideo Ohno
4. Allan H. MacDonald
5. T. Dietl

In Electronic, Optical and Magnetic Materials

1. Hideo Ohno
2. T. Dietl
3. T. Jungwirth
4. Allan H. MacDonald
5. J. Sinova
6. Jan Kucera
7. J. Masek
8. Pallab K. Bhattacharya

In Materials Chemistry

1. T. Dietl
2. Hideo Ohno
3. J. Sinova
4. T. Jungwirth
5. Allan H. MacDonald
6. J. Masek
7. Jan Kucera
8. Pallab K. Bhattacharya

Citations in the corpus

• Spin-polarized light-emitting diodes and lasers (2007, background): “Although low-temperature, post-growth annealing has been shown to improve the ferromagnetic transition temperatures and electrical properties due to the reduction of defect levels, the Curie temperature is still low (TC < 173 K) [38, 39].”
• Dilute ferromagnetic semiconductors: Physics and spintronic structures (2013, background): “…on the ferromagnetism of (Ga,Mn)As can be partly reduced by an annealing process (Chiba et al., 2003; Edmonds et al., 2002; Hayashi et al., 2001; Ku et al., 2003; Potashnik et al., 2001; Sørensen et al., 2003) that promotes the diffusion of the MnI ions to the surface, where they partake in the…”
• Theory of ferromagnetic (III, Mn) V semiconductors (2006, background): “…temperature can substantially improve magnetic and transport properties of the thin DMS layers due to the out-diffusion of charge and moment compensating defects, now identified as interstitial Mn (Chiba et al., 2003a; Edmonds et al., 2002a; Eid et al., 2005; Ku et al., 2003; Yu et al., 2002).”