Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing
By K. Fukuda, Seiji Suzuki, Tomoyuki N. Tanaka, K. Arai. 2000
152 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/0c0ad7adedb865b97581bb709b00a86df67886b3
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
In Electronic, Optical and Magnetic Materials
Citations in the corpus
- Silica on Silicon Carbide (2008, background): “A putatively successful approach in hydrogen passivation of n -type 4H-SiC at temperatures above 800°C 325 was topic of some dispute.”