Domain engineered switchable strain states in ferroelectric (011) [Pb(Mg1/3Nb2/3)O3](1−x)-[PbTiO3]x (PMN-PT, x≈0.32) single crystals

By Tao Wu, Ping Zhao, M. Bao, A. Bur, J. L. Hockel, Kin L. Wong, K. Mohanchandra, C. Lynch, G. Carman. 2011

175 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/0bc5c2b1e0d1678b9acaccad15e18530836f6fa8

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In Electronic, Optical and Magnetic Materials

1. P. Amiri
2. Kang L. Wang
3. C. Lynch

In Materials Chemistry

1. Kang L. Wang
2. P. Amiri
3. C. Lynch

Citations in the corpus

• Electrical control of reversible and permanent magnetization reorientation for magnetoelectric memory devices (2011, background): “Recently, Wu et al.11 experimentally demonstrated an electric field induced reversible and permanent transition from a magnetic isotropic easy plane to an uniaxial magnetic anisotropy in Ni/(011) [Pb(Mg1/3Nb2/3)O3](1 x) [PbTiO3]x (PMN-PT, x 0.32) ME heterostructure.”