Switching current reduction using perpendicular anisotropy in CoFeB-MgO magnetic tunnel junctions

By P. Amiri, Z. Zeng, J. Langer, Hui Zhao, G. Rowlands, Y. Chen, I. Krivorotov, Jianping Wang, HongWen Jiang, Jordan A. Katine and 3 more. 2011

188 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/0bb8f459c196c583f9c2bb8803b4339cc42293ba

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In Atomic and Molecular Physics, and Optics

1. Juan G. Alzate
2. Kang L. Wang
3. P. Amiri
4. Jordan A. Katine

In Electronic, Optical and Magnetic Materials

1. Juan G. Alzate
2. P. Amiri
3. Kang L. Wang

In Materials Chemistry

1. Kang L. Wang
2. P. Amiri

Citations in the corpus

• Electric-Field-Controlled Magnetoelectric RAM: Progress, Challenges, and Scaling (2015, methodology): “Thus, manipulating metallic ferromagnets via voltage-controlled interfacial perpendicular magnetic anisotropy (PMA) can be used to realize electric-field controlled nanomagnetic devices [7], [21]–[33].”
• Low-power non-volatile spintronic memory: STT-RAM and beyond (2013, methodology): “Using Co20Fe60B20 free layers, our recent work [30] has demonstrated the reduction in the average quasi-static switching current density by >40% (from ∼2.”