Low-k dielectric materials
By D. Shamiryan, T. Abell, F. Iacopi, K. Maex. 2004
306 citations recorded by the source corpus.
Abstract Performance improvements in microelectronic integrated circuits (ICs) over the past few decades have, for the most part, been achieved by increasing transistor speed, reducing transistor size, and packing more transistors onto a single chip. Smaller transistors work faster, so ICs have become faster and more complex. An emerging factor that may disrupt this trend is the slowing speed of signal propagation within the chip. Signal delays, caused by the interconnection wiring, increase with each generation of scaling and may soon limit the overall performance of the integrated system.
Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Mechanics of Materials
View Paper: https://www.semanticscholar.org/paper/0a36f1418be475c9ce7647f89fc2c18b3b1bd3a6
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In Electrical and Electronic Engineering
In Electronic, Optical and Magnetic Materials
In Mechanics of Materials
Citations in the corpus
- Chemical mechanical planarization for microelectronics applications (2004, background): “A fully continuous barrier (c) prevents HF from attacking the underlying dielectric, but discontinuities or ‘pinholes’ in the barrier allows HF to attack the dielectric (d) [205].”