Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements

By S. Privitera, E. Rimini, R. Zonca. 2004

204 citations recorded by the source corpus.

Subfields: Ceramics and Composites, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/07faf4e17064c9e8c84f7debd65156f347f5e895

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In Ceramics and Composites

1. Andrew M. Sarangan
2. I. Agha
3. Pengfei Guo

In Electrical and Electronic Engineering

1. Andrew M. Sarangan
2. I. Agha
3. Pengfei Guo

In Materials Chemistry

1. Andrew M. Sarangan
2. I. Agha
3. Pengfei Guo

Citations in the corpus

• A Review of Germanium-Antimony-Telluride Phase Change Materials for Non-Volatile Memories and Optical Modulators (2019, methodology): “A variety of elements such as C [98,99], O [100], N [100], Ni [101], Si [102], Al [103,104], Ti [105], W [52] and Cu [106] have been used to improve the device performance.”