Nonvolatile Molecular Memory Elements Based on Ambipolar Nanotube Field Effect Transistors
By M. Radosavljevic, M. Freitag, K. Thadani, A. T. Johnson. 2002
252 citations recorded by the source corpus.
We have fabricated air-stable n-type, ambipolar carbon nanotube field effect transistors (CNFETs) and used them in nanoscale memory cells. n-Type transistors are achieved by annealing nanotubes in hydrogen gas and contacting them by cobalt electrodes. Scanning gate microscopy reveals that the bulk response of these devices is similar to gold-contacted p-CNFETs, confirming that Schottky barrier formation at the contact interface determines accessibility of electron and hole transport regimes. The transfer characteristics and Coulomb blockade (CB) spectroscopy in ambipolar devices show strongly enhanced gate coupling, most likely due to reduction of defect density at the silicon/silicon-dioxide interface during hydrogen anneal. The CB data in the “on”-state indicates that these CNFETs are nearly ballistic conductors at high electrostatic doping. Due to their nanoscale capacitance, CNFETs are extremely sensitive to the presence of individual charges around the channel. We demonstrate that this property can b...
Subfields: Computational Theory and Mathematics, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/06ac8ac965d016f38dfbb659e8ad61402e6bc6d8
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In Electrical and Electronic Engineering
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Citations in the corpus
- Electroactive polymer-based devices for e-textiles in biomedicine (2005, background): “…and polymers, carbon nanotubes represent a third kind of organics, with macromolecular structures showing semiconducting properties, which have so far enabled the implementation of high-performance FETs [133]–[142], data storage memories [135], [143], [144], and infrared light emitters [145].”
- Properties and applications of high-mobility semiconducting nanotubes (2004, result): “Similar results were presented by Radosavljević et al (2002) showing the presence of contact barriers in n-type NT-FETs.”